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STGW8M120DF3 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - IGBTs - Single Package/Case: TO-247-3
- Description: TRENCH GATE FIELD-STOP IGBT M SE
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STGW8M120DF3 Specifications:
- MfrPart.: STGW8M120DF3
- Mfr: STMicroelectronics
- Description: TRENCH GATE FIELD-STOP IGBT M SE
- Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
- Package: Tube
- Series: M
- PartStatus: Active
- IGBTType: Trench Field Stop
- Voltage-CollectorEmitterBreakdown(Max): 1200 V
- Current-Collector(Ic)(Max): 16 A
- Current-CollectorPulsed(Icm): 32 A
- Vce(on)(Max)@VgeIc: 2.3V @ 15V, 8A
- Power-Max: 167 W
- SwitchingEnergy: 390µJ (on), 370µJ (Off)
- InputType: Standard
- GateCharge: 32 nC
- Td(on/off)@25°C: 20ns/126ns
- TestCondition: 600V, 8A, 33Ohm, 15V
- ReverseRecoveryTime(trr): 103 ns
- OperatingTemperature: -55°C ~ 175°C (TJ)
- MountingType: Through Hole
- Package/Case: TO-247-3
- STGW8M120DF3 STMicroelectronics, TRENCH GATE FIELD-STOP IGBT M SE, Discrete Semiconductor Products~Transistors - IGBTs - Single
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