Leading-edge power technologies for both high-and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors belonging to the STPOWER family. ST offers a wide portfolio of power MOSFETs ranging from -100 to 1700 V, IGBTs with breakdown voltages ranging from 300 to 1700 V and power bipolar transistors ranging from 15 to 1700 V. Due to the improved thermal design of ST's power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the industry’s highest temperature rating of 200 °C and voltage ranging from 650 to 1700 V. As well as, our Gallium Nitride on silicon substrate (GaN/Si) transistors allow highest efficiency and highest power density thanks to outstanding specific dynamic on-state resistance and small capacitances ranging to 100 and 650 V.

ST‘s wide STPOWER product portfolio combined with state-of-the art packaging (i.e. discrete and module) and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.

ST’s 10-year longevity commitment program ensures stable and continuous supply for customers

ST has certified several STPOWER high-voltage MOSFETs, IGBTs and Intelligent Power Modules (IPMs) for 10-year longevity. STPOWER SiC MOSFETs are also included in the program, with a minimum longevity commitment of 7 years. This program supports customer design investments by ensuring that selected devices are available during a minimum of 10 or 7 years from the notification date.

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