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SCTWA60N120G2-4 Images
- Manufacturer: STMicroelectronics(ST)
- Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single SupplierDevicePackage: TO-247-4
- Description: SILICON CARBIDE POWER MOSFET 120
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SCTWA60N120G2-4 Specifications:
- MfrPart.: SCTWA60N120G2-4
- Mfr: STMicroelectronics
- Description: SILICON CARBIDE POWER MOSFET 120
- Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
- Package: Tube
- Series: -
- PartStatus: Active
- FETType: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- DraintoSourceVoltage(Vdss): 1200 V
- Current-ContinuousDrain(Id)@25°C: 60A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn): 18V
- RdsOn(Max)@IdVgs: 52mOhm @ 30A, 18V
- Vgs(th)(Max)@Id: 5V @ 1mA
- GateCharge(Qg)(Max)@Vgs: 94 nC @ 18 V
- Vgs(Max): +22V, -10V
- InputCapacitance(Ciss)(Max)@Vds: 1969 pF @ 800 V
- FETFeature: -
- PowerDissipation(Max): 388W (Tc)
- OperatingTemperature: -55°C ~ 200°C (TJ)
- MountingType: Through Hole
- SupplierDevicePackage: TO-247-4
- SCTWA60N120G2-4 STMicroelectronics, SILICON CARBIDE POWER MOSFET 120, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
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